Ultrafast dynamics in phosphorus-implanted silicon wafers: The effects of annealing

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 8, 2002, Pages 852061-8520610

  Othonos, Andreas ^a   Christofides, Constantinos ^a  

^a UNIVERSITY OF CYPRUS   (Cyprus)

Author keywords

[No Author keywords available]

Indexed keywords

PHOSPHORUS DERIVATIVE; SILICON DERIVATIVE;

ARTICLE; CHEMICAL REACTION; CRYSTALLIZATION; INTERMETHOD COMPARISON; MATHEMATICAL MODEL; MOLECULAR DYNAMICS; RAMAN SPECTROMETRY; REACTION ANALYSIS; REACTION TIME; TEMPERATURE DEPENDENCE;

EID: 0037104181     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.085206     Document Type: Article

References (30)

1. H. Ryssel and I. Ruge, Ion Implantation (Wiley, Toronto 1986).
2. Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization, Vol. 45 of Semiconductors and Semimetals, edited by G. Ghibaudo and C. Christofides (Academic, New York, 1997).
3. Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization, Vol. 46 of Semiconductors and Semimetals, edited by C. Christofides and G. Ghibaudo (Academic, New York, 1997).
4. J. Kubhl, E. O. Gobel, Th. Pfeiffer, and A. Jonietz, Appl. Phys. A: Solids Surf. 34, 105 (1984).
5. O. B. Wright, U. Zammit, M. Marinelli, and V. E. Gusev, Appl. Phys. Lett. 69, 553 (1996).
6. F. E. Doany, D. Grischkowsky, and C. C. Chi, Appl. Phys. Lett. 50, 460 (1987).
7. A. Othonos, Appl. Phys. Rev. 83, 1789 (1998).
8. A. Othonos, C. Christofides, J. Boussey-Said, and M. Bisson, J. Appl. Phys. 75, 8032 (1994).
9. U. Zammit, K. N. Madhusoodanan, M. Marinelli, F. Scudieri, R. Pizzoferrato, F. Mercuri, E. Wendler, and W. Wesch, Phys. Rev. B 49, 14 322 (1994).
10. D. E. Aspnes, A. A. Studna, and E. Kinsbron, Phys. Rev. B 29, 768 (1984).
11. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
12. G. E. Jellison and F. A. Modine, Phys. Rev. B 27; 7466 (1983).
13. G. E. Jellison and F. A. Modine, Appl. Phys. Lett. 41, 180 (1982).
14. M. Nestoros, B. C. Forget, C. Christofides, and A. Seas, Phys. Rev. B 51, 14 115 (1995).
15. H. M. van Driel, Phys. Rev. B 35, 8166 (1987).
16. A. Othonos, H. M. van Driel, J. F. Young, and P. J. Kelly, Phys. Rev. B 43, 6682 (1991).
17. J. F. Young and H. M. van Driel, Phys. Rev. B 26. 2147 (1982).
18. E. M. Conwell, in Solid State Physics, edited F. Seitz, D. Turnbull, and H. Ehrenreich (Academic, New York, 1967), Suppl. 9.
19. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).
20. R. F. Wood and G. E. Giles, Phys. Rev. B 23, 2923 (1981).
21. J. Dwiezor and W. Schmid, Appl. Phys. Lett. 31, 346 (1977).
22. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969).
23. J. Geist and W. K. Gladden, Phys. Rev. B 27, 4833 (1983).
24. R. Reitano, M. G. Grimaldi, P. Baeri, E. Bellandi, S. Borghesi, and G. Baratta, J. Appl. Phys. 74, 2850 (1993).
25. A. Othonos, C. Christofides, and A. Mandelis, Appl. Phys. Lett. 69, 821 (1996).
26. A. Seas, M. Eleftheriou, C. Christofides, and C. R. Theocharis, Nucl. Instrum. Methods Phys. Res. B 103, 46 (1995).
27. A. Othonos and C. Christofides, J. Appl. Phys. 78, 796 (1995).
28. J. Boussey-Said, G. Ghibaudo, J. Stoemenos, and P. Zaumseil, J. Appl. Phys. 72, 61 (1992).
29. L. Csepredgi, E. F. Kennedy, T. J. Gallager, J. W. Mayer, and T. W. Sigmon, J. Appl. Phys. 48, 4234 (1977).
30. A. Othonos and C. Christofides, J. Appl. Phys. 78, 796 (1995).