Crystal growth and characterization of the cubic semiconductor Cu 2SnSe 4

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 1811-1815

  Marcano, G ^a   Rincon C ^a   Marin G ^a   Tovar, R ^a   Delgado, G ^b  

^a FACULTAD DE CIENCIAS   (Venezuela)

^b UNIVERSIDAD DE LOS ANDES   (Venezuela)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; ACOUSTIC PHONONS; CHARGE STATE; COPPER ATOMS; CUBIC STRUCTURE; DENSITY-OF-STATES; EFFECTIVE MASS; ELECTRICAL RESISTIVITY MEASUREMENTS; FREE ELECTRON; FUNDAMENTAL ABSORPTION EDGE; IONIZED IMPURITIES; MAGNETIZATION MEASUREMENTS; P TYPE SEMICONDUCTOR; SPACE GROUPS; SPIN-ORBIT SPLITTINGS; TEMPERATURE DEPENDENCE; TEMPERATURE VARIATION; THERMAL ACTIVATION; UNIT CELL PARAMETERS; X-RAY POWDER;

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; PARAMAGNETISM; X RAY POWDER DIFFRACTION;

TEMPERATURE DISTRIBUTION;

EID: 0037103463     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1492018     Document Type: Article

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