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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 94, Issue 1, 2002, Pages 20-31

Sharp fluctuations in carrier concentrations with small changes in crystal stoichiometry of semi-insulating GaAs

(2) Deepak, a Priyadarshi, A a

a INDIAN INSTITUTE OF TECHNOLOGY KANPUR (India)

Author keywords

Carrier concentrations; GaAs; Modeling; Point defects; Semi insulating

Indexed keywords

CARRIER CONCENTRATION; COMPUTER AIDED DESIGN; POINT DEFECTS; STOICHIOMETRY; SUBSTRATES; THERMODYNAMICS;

CRYSTAL STOICHIOMETRY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037097049 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(02)00067-3 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.