Epitaxial α-Be3N2 thin films grown on Si substrates by reactive laser ablation

Materials Science and Engineering: B

Volumn 94, Issue 1, 2002, Pages 62-65

  Soto, G ^a,c   Diaz J A ^a   De La Cruz, W ^a   Contreras, O ^a,b   Moreno, M ^a   Reyes, A ^a  

^a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^b ARIZONA STATE UNIVERSITY   (United States)

^c CENTRO DE CIENCIAS DE LA MATERIA CONDENSADA   (Mexico)

Author keywords

Beryllium nitride; Epitaxy; Laser ablation; Thin films

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BERYLLIUM COMPOUNDS; EPITAXIAL GROWTH; LASER ABLATION; MOLECULAR ORIENTATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BERYLLIUM NITRIDE THIN FILMS;

THIN FILMS;

EID: 0037096993     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00074-0     Document Type: Article

References (6)