Ni-Mn-Ga thin films produced by pulsed laser deposition

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 8234-8236

  Tello, P G ^a   Castano F J ^a   O'Handley, R C ^a   Allen, S M ^a   Esteve, M ^b   Castano F ^b   Labarta, A ^c   Batlle, X ^c  

^a USA   (United States)

^b UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^c UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AUSTENITIC; BASE PRESSURE; ELECTRICAL RESISTANCES; GRANULAR STRUCTURESS; IN-VACUUM; LOW TEMPERATURES; MAGNETORESISTANCE RATIO; MARTENSITIC TRANSITIONS; NI-MN-GA; NI-MN-GA THIN FILMS; POLYCRYSTALLINE; ROOM TEMPERATURE; SI (100) SUBSTRATE; TEMPERATURE DEPENDENCE;

GALLIUM; GALLIUM ALLOYS; MAGNETIC SUSCEPTIBILITY; MANGANESE; PULSED LASER DEPOSITION; SILICON WAFERS; STOICHIOMETRY; X RAY DIFFRACTION;

ATMOSPHERIC TEMPERATURE;

EID: 0037095212     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1452222     Document Type: Article

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