Particle size and magnetic field dependent resistivity and thermoelectric power of La 0.5Pb 0.5MnO 3 above and below metal-insulator transition

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5125-5134

  Banerjee, Aritra ^a   Pal, Sudipta ^a   Bhattacharya, S ^a   Chaudhuri, B K ^a   Yang, H D ^b  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; DC CONDUCTIVITY; DC MAGNETIC SUSCEPTIBILITY; GRAIN SIZE; HIGH TEMPERATURE; LOW TEMPERATURES; METALLIC PHASE; METALLIC REGIME; POLARON HOPPING; RESISTIVITY DATA; SMALL POLARON HOPPING MODELS; SPIN-WAVE FLUCTUATION; TEMPERATURE DEPENDENT; TRANSPORT MECHANISM; VARIABLE RANGE HOPPING;

ELECTRIC RESISTANCE; LEAD; MAGNETIC FIELDS; MAGNETIC SUSCEPTIBILITY; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE OXIDE; POLARONS; SEMICONDUCTOR INSULATOR BOUNDARIES; THERMOELECTRIC POWER; TRANSPORT PROPERTIES;

GRAIN SIZE AND SHAPE;

EID: 0037091472     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459618     Document Type: Article

References (36)

1. M. McCormack, S. Jin, T. H. Tiefel, R. M. Fleming, J. M. Phillips, and R. Ramesh, Appl. Phys. Lett. 64, 3045 (1994). apl APPLAB 0003-6951
2. R. von Helmolt, J. Wecker, B. Holzapfel, M. Schultz, and K. Samwer, Phys. Rev. Lett. 71, 2331 (1993). prl PRLTAO 0031-9007
3. R. Mahendiran, R. Mahesh, A. K. RayChaudhuri, and C. N. R. Rao, J. Phys. D 28, 1743 (1995). jpd JPAPBE 0022-3727
4. C. Zener, Phys. Rev. 82, 403 (1951). phr PHRVAO 0031-899X
5. A. J. Millis, P. B. Littlewood, and B. I. Shraiman, Phys. Rev. Lett. 74, 5144 (1995). prl PRLTAO 0031-9007
6. B. Chen, A. G. Rojo, C. Uher, H. L. Ju, and R. L. Greene, Phys. Rev. B 55, 15471 (1997). prb PRBMDO 0163-1829
7. M. Jaime, P. Lin, M. B. Salamon, and P. D. Han, Phys. Rev. B 58, R5901 (1998). prb PRBMDO 0163-1829
8. K. Chahara, T. Ohno, M. Kasai, and Y. Kozono, Appl. Phys. Lett. 63, 1990 (1993). apl APPLAB 0003-6951
9. R. Mahesh, R. Mahendiran, A. K. RayChaudhuri, and C. N. R. Rao, Appl. Phys. Lett. 68, 2291 (1996). apl APPLAB 0003-6951
10. R. Mahendiran, R. Mahesh, A. K. RayChaudhuri, and C. N. R. Rao, Solid State Commun. 99, 149 (1996). ssc SSCOA4 0038-1098
11. A. Gupta et al., Phys. Rev. B 54, R15629 (1996). prb PRBMDO 0163-1829
12. G. Ji, X. J. Fan, J. H. Zhang, C. S. Xiong, and X-G. Li, J. Phys. D 31, 3036 (1998). jpd JPAPBE 0022-3727
13. A. Banerjee, S. Pal, and B. K. Chaudhuri, J. Chem. Phys. 115, 1550 (2001). jcp JCPSA6 0021-9606
14. A. Banerjee, S. Pal, S. Bhattacharya, B. K. Chaudhuri, and H. D. Yang, Phys. Rev. B 64, 104428 (2001). prb PRBMDO 0163-1829
15. S. Pal, A. Banerjee, E. Rozenberg, and B. K. Chaudhuri, J. Appl. Phys. 89, 4955 (2001). jap JAPIAU 0021-8979
16. A. Taylor, X-Ray Metallography (Wiley, New York, 1961), p. 674.
17. N. Zhang, W. Yang, W. Ding, D. Xing, and Y. Du, Solid State Commun. 109, 537 (1999). ssc SSCOA4 0038-1098
18. X. Wen-xu, L. Bao-he, Q. Zheng-nan, and J. Han-min, J. Appl. Phys. 86, 5164 (1999). jap JAPIAU 0021-8979
19. G. H. Jonker and J. H. Van Santen, Physica (Amsterdam) 16, 337 (1950). phy PHYSAG 0031-8914
20. G. J. Snyder, R. Hiskes, S. DiCarolis, M. R. Beasley, and T. H. Geballe, Phys. Rev. B 53, 14434 (1996). prb PRBMDO 0163-1829
21. L. Pi, L. Zheng, and Y. Zhang, Phys. Rev. B 61, 8917 (2000). prb PRBMDO 0163-1829
22. H. Y. Hwang, S-W. Cheong, N. P. Ong, and B. Batlogg, Phys. Rev. Lett. 77, 2041 (1996). prl PRLTAO 0031-9007
23. J. M. De Teresa et al., Phys. Rev. B 54, 1187 (1996). prb PRBMDO 0163-1829
24. A. Urushibara et al., Phys. Rev. B 51, 14103 (1995). prb PRBMDO 0163-1829
25. P. Schiffer, A. P. Ramirez, W. Bao, and S.-W. Cheong, Phys. Rev. Lett. 75, 3336 (1995). prl PRLTAO 0031-9007
26. N. F. Mott and E. A. Davis, Electronics Process in Non Crystalline Materials (Clarendon, Oxford, 1971).
27. R. Mahendiran, S. K. Tiwary, A. K. RayChaudhuri, T. V. Ramakrishnan, R. Mahesh, N. Rangavittal, and C. N. R. Rao, Phys. Rev. B 53, 3348 (1996). prb PRBMDO 0163-1829
28. G. N. Austin and N. F. Mott, Adv. Phys. 18, 41 (1969). adp ADPHAH 0001-8732
29. M. Jaime, M. B. Salamon, M. Rubinstein, R. E. Treece, J. S. Horwitz, and D. B. Chrisey, Phys. Rev. B 54, 11914 (1996). prb PRBMDO 0163-1829
30. M. Viret, L. Ranno, and J. M. D. Coey, Phys. Rev. B 55, 8067 (1997). prb PRBMDO 0163-1829
31. P. Mandal, Phys. Rev. B 61, 14675 (2000). prb PRBMDO 0163-1829
32. V. H. Crespi, L. Lu, Y. X. Jia, K. Khazeni, A. Zettl, and M. L. Cohen, Phys. Rev. B 53, 14303 (1996). prb PRBMDO 0163-1829
33. S. Chatterjee, P. H. Chou, C. F. Chang, I. P. Hong, and H. D. Yang, Phys. Rev. B 61, 6106 (2000). prb PRBMDO 0163-1829
34. K. Sega, Y. Kuroda, and H. Sakata, J. Mater. Sci. 33, 1303 (1998). jmt JMTSAS 0022-2461
35. M. Jaime, M. B. Salamon, K. Pettit, M. Rubinstein, R. E. Treece, J. S. Horwitz, and D. B. Chrisey, Appl. Phys. Lett. 68, 1576 (1996). apl APPLAB 0003-6951
36. V. N. Bogomolov, E. K. Kudinov, and Y. A. Firsov, Sov. Phys. Solid State 9, 2502 (1968). sps SPSSA7 0038-5654