Ion beam analysis of SiCx thin films using a deuterium beam

Surface and Coatings Technology

Volumn 153, Issue 2-3, 2002, Pages 119-124

  Andrade, E ^a   Mahmood, A ^b   Muhl, S ^b   Zavala, E P ^a   Pineda, J C ^a   Huerta, L ^a  

^a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^b INSTITUTO DE INVESTIGACIONES EN MATERIALES   (Mexico)

Author keywords

Characterisation films; NRA; RBS; Silicon carbide; Thin film RF

Indexed keywords

DEUTERIUM; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BEAMS; ION BOMBARDMENT; MAGNETRON SPUTTERING; OPTIMIZATION; PROFILOMETRY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

DEUTERIUM BEAMS;

THIN FILMS;

ANALYSIS; ELECTRONICS INDUSTRY; FILM; HIGH TEMPERATURE APPLICATION; SILICON CARBIDE;

EID: 0037090929     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(01)01689-9     Document Type: Article

References (14)