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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 11, 2002, Pages 1153251-1153255

Binding energy of charged excitons bound to interface defects of semiconductor quantum wells

(4) Dacal, Luis C a,b Ferreira, R a Bastard, G a Brum, José A b,c

a Lab Phys Matiere Cond l'Ecl N (France)

b UNIVERSITY OF CAMPINAS (Brazil)

c LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ARSENIC; GALLIUM;

ARTICLE; ATOMIC PARTICLE; BINDING AFFINITY; CALCULATION; ENERGY; MODEL; PHYSICS; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 0037088191 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.65.115325 Document Type: Article

Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.