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Physical Review B - Condensed Matter and Materials Physics
Volumn 65, Issue 8, 2002, Pages 853141-8531412
Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces
(6)
Betz, M
a
Goger G
a
Leitenstorfer, A
a
Bichler, M
a
Abstreiter, G
a
Wegscheider, W
a
a
TECHNICAL UNIVERSITY OF MUNICH
(
Germany
)
Author keywords
[No Author keywords available]
Indexed keywords
GALLIUM ARSENIDE;
ARTICLE; ELECTROMAGNETIC FIELD; ELECTRON; ELEMENTARY PARTICLE; LASER; MOLECULAR DYNAMICS; NONLINEAR SYSTEM; OPTICAL ROTATION; PHENOMENOLOGY; POLARIZATION; RADIATION SCATTERING; SEMICONDUCTOR; SPECTROSCOPY; THEORETICAL MODEL;
EID
:
0037084595
PISSN
:
01631829
EISSN
:
None
Source Type
:
Journal
DOI
:
None
Document Type
:
Article
Times cited : (
10
)
References (
44
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