Effects of visible light illumination during plasma enhanced chemical vapor deposition growth on the film properties of hydrogenated amorphous silicon

Journal of Applied Physics

Volumn 91, Issue 2, 2002, Pages 840-848

  Sakata, I ^a   Yamanaka, M ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT ANNIHILATION; DEPOSITION CHAMBERS; DEPOSITION TEMPERATURES; EXPERIMENTAL STUDIES; FILM PROPERTIES; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INITIAL DEFECTS; LIGHT-INDUCED CHANGES; LIGHT-INDUCED DEGRADATION; PLASMA REGION; REACTION BARRIERS; VISIBLE LIGHT;

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; DEFECT DENSITY; DEFECTS; DEGRADATION; HYDROGEN BONDS; HYDROGENATION; LIGHT; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; VAPORS;

FILM GROWTH;

EID: 0037080680     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1421242     Document Type: Article

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