High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials

Electronics Letters

Volumn 38, Issue 6, 2002, Pages 275-277

  Gauthier Lafaye, O ^a   Colson, V ^a   Py, J ^a   Thedrez, B ^a   Gentner, J L ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; LASER MODES; LIGHT MODULATION; LIGHT TRANSMISSION; MOLECULAR BEAM EPITAXY; PROTONS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DIRECTLY MODULATED MULTIPLE QUANTUM WELL LASER; GAS SOURCE MOLECULAR BEAM EPITAXY; INDIUM ARSENIC PHOSPHIDE; INDIUM GALLIUM ARSENIC PHOSPHIDE; PROTON IMPLANTATION; SEPARATE CONFINEMENT HETEROSTRUCTURE;

DISTRIBUTED FEEDBACK LASERS;

EID: 0037075649     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020189     Document Type: Article

References (9)

1. Superfast 1.55 μm DFB lasers
2. Packaged 1.55 μm DFB laser with 25 GHz modulation bandwidth
3. Transmission characteristics of uncooled and directly modulated 1.3 micrometers distributed feedback laser diode for serial 10 Gbit ethernet
4. 85°C, 10 Gbit/s operation of 1.3-μm InGaAlAs MQW-DFB laser
5. 1.3 μm AlGaInAs ridge waveguide lasers with uncooled 10 Gb/s operation at 85°C
6. 100°C, 10 Gb/s directly modulated InGaAsP DFB lasers for uncooled Ethernet applications
7. High temperature (Ga)InAsP/high bandgap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE
8. High performance, high reliability 1.3 μm BRS laser fabricated by MOVPE and RIBE techniques for large scale manufacturing