Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001)

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 279-283

  Shin, D O ^a   Ahn, Y S ^a   Ban, S H ^a   Lee, N E ^a   Ahn, B T ^b   Kim, S H ^c   Shim, K H ^c   Kang, J Y ^c  

^a Sungkyunkwan University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Cobalt disilicide; MOCVD; SiGe alloy; Silicide

Indexed keywords

COBALT COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; THIN FILMS;

EPITAXIAL THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037074860     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00799-1     Document Type: Conference Paper

References (10)