Single crystal growth and physical properties of the Cu2CdGeS4 compound

Journal of Alloys and Compounds

Volumn 339, Issue 1-2, 2002, Pages 40-45

  Davydyuk, G Ye ^a   Parasyuk, O V ^a   Romanyuk, Ya E ^a   Semenyuk, S A ^a   Zaremba, V I ^b   Piskach, L V ^a   Koziol, J J ^c   Halka, V O ^a  

^a LESYA UKRAINKA EASTERN EUROPEAN NATIONAL UNIVERSITY   (Ukraine)

^b IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

^c Wysza Szkola Pedagogiczna   (Poland)

Author keywords

Crystal structure; Electric transport; Semiconductors; Single crystal growth; X ray diffraction

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ENERGY GAP; HEAT TREATMENT; HOLE MOBILITY; LIGHT ABSORPTION; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

CHEMICAL VAPOR TRANSPORT; QUATERNARY COMPOUNDS;

COPPER COMPOUNDS;

EID: 0037071704     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(01)01987-9     Document Type: Article

References (13)