Application of the full-potential linear augmented-plane-wave method to the study of electronic properties in semiconductors with d valence electrons

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 82, Issue 7, 2002, Pages 791-800

  Zaoui, Ali ^a   Hassan, Fouad El Haj ^b  

^a ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

^b Lab Phys Liquides et Interfaces   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037053513     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642810110096071     Document Type: Article

References (38)