Single-electron devices formed by pattern-dependent oxidation: Microscopic structural evaluation

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 144-150

  Nagase, M ^a   Horiguchi, S ^a   Fujiwara, A ^a   Ono, Y ^a   Yamazaki, K ^a   Namatsu, H ^a   Takahashi, Y ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Atomic force microscopy; Band profile modulation; Pattern dependent oxidation; Scanning electron microscopy; Si nanostructure; Single electron device

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC WIRE; ENERGY GAP; INTEGRATED CIRCUITS; NANOSTRUCTURED MATERIALS; OXIDATION; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; STRESSES;

PATTERN-DEPENDENT OXIDATION (PADOX);

ELECTRON DEVICES;

EID: 0037042006     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00874-1     Document Type: Conference Paper

References (23)