Tunnel magnetoresistance and interfacial electronic state

Journal of Physics D: Applied Physics

Volumn 35, Issue 19, 2002, Pages 2432-2436

  Inoue, J ^a   Itoh, H ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; FERROMAGNETIC MATERIALS; GIANT MAGNETORESISTANCE; IMPURITIES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MULTILAYERS;

ANDERSON MODEL; INTERFACIAL ELECTRONIC STATE; SPIN DEPENDENT S ELECTRON TUNNELING; TUNNEL MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

EID: 0037038144     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/35/19/317     Document Type: Article

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