Angular dependent characteristics of a 1.3-μm GalnNAs/GaAs quantum-well resonant cavity enhanced photodetect

Microwave and Optical Technology Letters

Volumn 34, Issue 5, 2002, Pages 333-336

  Ruikang, Zhang ^a   Yuan, Zhong ^a   Wei, Zhang ^b   Yingqiang, Xu ^b   Yun, Du ^b   Yongqing, Huang ^a   Xiaomin, Ren ^a   Zhichuan, Niu ^b   Ronghan, Wu ^b  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

GaInNAs quantum wells; Resonant cavity enhanced photodetector; WDM networks

Indexed keywords

CAVITY RESONATORS; COMPUTER SIMULATION; PHOTOCURRENTS; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS; WAVELENGTH DIVISION MULTIPLEXING;

INCIDENT LIGHT ANGLE; RESONANT CAVITY ENHANCED PHOTODETECT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037026381     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.10454     Document Type: Article

References (5)

1. Resonant cavity-enhanced (RCE) photodetectors
2. Resonant cavity-avalanche photodiodes and narrow spectral response photodiodes
3. Optimally designed layer formation for wavelength-selective photodetectors based on grating-assisted coupling
4. Resonant-cavity photodiode operating at 1.55 μm with Burstein-shifted In0.53Ga0.47As/InP reflectors
5. 1.3 μm GaInNAs/GaAs quantum well resonant cavity enhanced photodetector