Pulsed laser deposition of Nd:YAG on Si with substrate bias voltage

Applied Surface Science

Volumn 193, Issue 1-4, 2002, Pages 261-267

  Rumianowski, Roman ^a   Rozpłoch, Franciszek ^b   Dygdała, Roman S ^b   Kulesza, Sławomir ^b   Płóciennik, Przemysław ^b   Wojtowicz, Andrzej ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b NICOLAUS COPERNICUS UNIVERSITY   (Poland)

Author keywords

Epitaxy; Growth; Plasma processing

Indexed keywords

ELECTRIC FIELD EFFECTS; EPITAXIAL GROWTH; GARNETS; MASS SPECTROMETERS; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SILICON WAFERS; THIN FILMS; X RAY DIFFRACTION ANALYSIS; YTTRIUM COMPOUNDS;

RADIOLUMINESCENCE SPECTROSCOPY (RLS);

SURFACE REACTIONS;

EID: 0037024496     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00488-9     Document Type: Article

References (14)