Photoluminescence properties of sol-gel derived SiO2 layers doped with porous silicon

Materials Science and Engineering C

Volumn 19, Issue 1-2, 2002, Pages 233-236

  Svrcek V ^a   Pelant, I ^a   Rehspringer, J L ^b   Gilliot, P ^b   Ohlmann, D ^b   Cregut O ^b   Honerlage B ^b   Chvojka, T ^c   Valenta, J ^c   Dian, J ^c  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^c CHARLES UNIVERSITY   (Czech Republic)

Author keywords

Nanocystalline silicon; Photoluminescence; Porous silicon

Indexed keywords

ELECTROCHEMICAL ETCHING; LIGHT EMITTING MATERIALS;

COMMINUTION; DISPERSIONS; ETCHING; ION IMPLANTATION; LIGHT EMISSION; PHOTOLUMINESCENCE; POROUS SILICON; SILICON WAFERS; SOL-GELS;

NANOSTRUCTURED MATERIALS;

NANOCRYSTAL; SILICON DIOXIDE;

EID: 0037005923     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(01)00480-5     Document Type: Article

References (8)