Active devices under CMOS I/O pads

IEEE Transactions on Electron Devices

Volumn 49, Issue 12, 2002, Pages 2279-2287

  Chou, Kuo Yu ^a   Chen, Ming Jer ^a   Liu, Chi Wen ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

CMOS; Copper; ESD; FSG; I O bonding pad; IMD; Low k; Propagation gate delay; Ring oscillator; Second break down trigger point; SOC; Transmission line pulse

Indexed keywords

COPPER; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC DISCHARGES; ELECTRIC EQUIPMENT PROTECTION; ELECTRIC IMPEDANCE; ELECTROSTATIC DEVICES; GLASS; OSCILLATORS (ELECTRONIC); STRESSES; THERMAL EFFECTS;

ELECTROSTATIC DISCHARGE PROTECTION DEVICES; FLUORINATED SILICATE GLASS; RING-OSCILLATOR CIRCUITS; SECOND BREAKDOWN TRIGGER POINT; SYSTEMS ON CHIPS; TRANSMISSION LINE PULSE;

CMOS INTEGRATED CIRCUITS;

EID: 0036999720     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.807452     Document Type: Article

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