Growth of a Si nanocrystal in an oxygen atmosphere. Computer simulation

Crystallography Reports

Volumn 47, Issue SUPPL. 1, 2002, Pages

  Galashev, A E ^a  

^a INSTITUTE OF THERMAL PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON;

ATOMIC PARTICLE; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; COMPUTER SIMULATION; CONFERENCE PAPER; CRYSTALLIZATION; MOLECULAR DYNAMICS; PARTICULATE MATTER; STATISTICAL ANALYSIS; VACUUM;

EID: 0036976257     PISSN: 10637745     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1529971     Document Type: Conference Paper

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