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Volumn 17, Issue 12, 2002, Pages 3090-3097

Influence of hole carrier density and sintering temperature on the electronic properties of magnetoresistive La0.7Pb0.3Mn1-xRuxO3 (0.0 ≤ x ≤ 0.4)

(7) Sahu, Ranjan Kumar a,c Rao, Manju Lata a Manoharan, Solomon Sundar a Elefant, Dieter b Verges, Peter b Gueth, A b Schneider, Claus M b

a INDIAN INSTITUTE OF TECHNOLOGY KANPUR (India)

b IFW DRESDEN (Germany)

c BHABHA ATOMIC RESEARCH CENTRE (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPY; FERROMAGNETISM; MAGNETISM; MAGNETORESISTANCE; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SINTERING; THERMAL EFFECTS;

CHARGE LOCALIZATION EFFECT; CURIE TEMPERATURE; DOUBLE-EXCHANGE FERROMAGNETIC EXCHANGE INTERACTION; HOLE CARRIER CONCENTRATION;

LANTHANUM COMPOUNDS;

EID: 0036968979 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2002.0447 Document Type: Article

Times cited : (1)

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