On the impact of nanotopography of silicon wafers on post-CMP oxide layers

Materials Science in Semiconductor Processing

Volumn 5, Issue 4-5 SPEC., 2002, Pages 413-418

  Schmolke, R ^a   Deters, R ^b   Thieme, P ^b   Pech, R ^a   Schwenk, H ^a   Diakourakis, G ^c  

^a SILTRONIC AG   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c ADE International GmbH   (Germany)

Author keywords

Chemo mechanical polishing; CMP; Nanotopography; Planarization; Planarization length; Silicon; Silicon wafer

Indexed keywords

ABRASION; CHEMICAL MECHANICAL POLISHING; DEPOSITION; NANOTECHNOLOGY; OXIDES; SURFACE ROUGHNESS;

NANOTOPOGRAPHY;

SILICON WAFERS;

EID: 0036963352     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00122-1     Document Type: Conference Paper

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