Development of II-VI high band gap devices for high efficiency tandem solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 724-727

  Mahawela, P ^a   Jeedigunta, S ^a   Ferekides, C S ^a   Morel, D L ^a  

^a University of South Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ENERGY GAP; INTERFACES (MATERIALS); MIS DEVICES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE STRUCTURE; THIN FILM DEVICES;

ELECTRONIC QUALITY; HIGH BAND GAP DEVICES; SINGLE PHASE MATERIAL; SUBSTANTIAL LOSSES; TANDEM SOLAR CELLS;

SOLAR CELLS;

EID: 0036957756     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. D. Bonnet and E. Rickus, Proceedings of the 14th IEEE PVSC, San Diego, January, 1980, p. 629.
2. P. Gashin, A. Focsha, T. Potlog, A. Simashkevich, and V. Leondar, Solar Energy Materials and Solar Cells, 46, (1997) 323.
3. P. Mahawela, S. Jeedigunta, C. S. Ferekides, and D. L. Morel, "Analysis of Carrier Transport Phenomena in High Band Gap II-VI-Based MIS Photovoltaic Devices", To be presented at the June, 2002 European MRS meeting, Strasbourg.