Comparison of remote and direct plasma silicon nitride

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 344-347

  Hauser, Alexander ^a   Weeber, Arthur W ^b   Soppe, Wim J ^b   Fath, Peter ^a   Bucher, Ernst ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFLECTION; SCREEN PRINTING; SURFACES; TEXTURES;

BULK PASSIVATION; PLASMA ACTIVATION; SURFACE DAMAGE; SURFACE PASSIVATION;

SILICON NITRIDE;

EID: 0036957003     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. A.G. Aberle, "Overview on SiN Surface Passivation of Crystalline Silicon Solar Cells", Solar Energy Materials and Solar Cells 65 (2001) 239-248
2. B. Lenkheit, T. Lauinger, A.G. Aberle, R. Hezel, "Comparison of Remote versus Direct PECVD Silicon Nitride Passivation of Phosphorus-Diffused Emitters of Silicon Solar Cells", 2nd WCPVSEC 1998, Vienna, Austria, 1434
3. Lanford, W. A. and Rand, M. J., "The Hydrogen Content Of Plasma-Deposited Silicon Nitride", Journal of Applied Physics, 49, (1978), 2473
4. J. Szlufcik, K. De Clercq, P. De Schepper, J. Poortmans, A. Buczkowski, J. Nijs, R. Mertens, "Improvement in multicrystalline silicon solar cells after thermal treatment of PECVD silicon nitride AR coating", Proc. of the 12th EC PVSEC, 1994, Amsterdam, The Netherlands, 1018
5. A. Hauser, M. Spiegel, P. Fath, E. Bucher, "Influence of an Ammonia Activation prior to the PECVD SiN Deposition on the Solar Cell Performance", Solar Energy Materials and Solar Cells, in print
6. Photon international, March 2002
7. W.J. Soppe, B.G. Duijvelaar, S.E.A. Schiermeier, A.W. Weeber, A. Steiner, F.M. Schurmans, "A high throughput PECVD Reactor for Deposition of Passivating SiN Layers", 16th EC PVSEC, 2000, Glasgow, UK, 1420