Investigation of the microstructure of Cu(In,Ga)Se2 thin films used in high-efficiency devices

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 508-510

  Noufi, Romme ^a   Yan, Yanfa ^a   Abu Shama, Jehad ^b   Jones, Kim ^a   Al Jassim, Mowafak ^a   Keyes, Brian ^a   Alleman, Jeff ^a   Ramanathan, Kannan ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); PHASE TRANSITIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

COPPER INDIUM GALLIUM SELENIDE; HIGH EFFICIENCY DEVICES;

THIN FILMS;

EID: 0036956748     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J. AbuShama, R. Noufi, Y. Yan, K.M. Jones, B. Keyes, P. Dippo, M. Romero, M. Al-Jassim, J. Alleman, and D.L. Williamson, Mat. Res. Soc., Proc. 668, 2001, p.H7.2.1.
2. T. Wada, N. Kohara, T. Negami, and M. Nishitani, J. Mater. Res. 12, 1456 (1997).
3. Y. Yan, K.M. Jones, J. AbuShama, M. Al-Jassim, and R. Noufi, Mat. Res. Soc. Proc. 668, 2001, p. H6.10.1.
4. Y. Yan, K.M. Jones, J. AbuShama, M.M. Al-Jassim, and R. Noufi, APL, 2002 (in press)