DCIV and spectral charge-pumping studies of γ-ray and X-ray irradiated power VDMOSFET devices

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 3230-3237

  Park, M S ^a   Na, I M ^a   Lee, C I ^a   Wie, Chu R ^a  

^a the State University of New York   (United States)

Author keywords

Interface state; Power VDMOSFET DCIV; Radiation effects; Spectral change pumping

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRIC CHARGE; ELECTRIC CURRENTS; GAMMA RAYS; IRRADIATION; RADIATION EFFECTS; X RAY ANALYSIS;

SPECTRAL CHARGE-PUMPING;

MOSFET DEVICES;

EID: 0036956121     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805336     Document Type: Conference Paper

References (22)

1. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, T. P. Ma and P. V. Dressendorfer, Eds. New York: Wiley, 1989.
2. S. R. Anderson et al., "The surface generation hump in irradiated power MOSFET's," IEEE Trans. Nucl. Sci., vol. 41, pp. 2443-2451, Dec. 1994.
3. 2 interface trap density in irradiated four-terminal VDMOSFEET's using charge-pumping," IEEE Trans. Nucl. Sci., vol. 43, pp. 2558-2564, Dec. 1996.
4. 2/Si interface in virgin and irridiated power VDMOSFET's," IEEE Trans. Electron Devices, vol. 43, pp. 2197-2209, 1996.
5. B. Jaksic et al., "Latent interface-trap generation in commercial power VDMOSFET's," IEEE Trans. Nucl. Sci., vol. 45, pp. 36-42, Feb. 1998.
6. B. Jaksic, M. M. Pejovic, and G. S. Ristic, "Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFET's," IEEE Trans. Nucl. Sci., vol. 47, pp. 659-666, Apr. 2000.
7. M. S. Park and C. R. Wie, "Study of radiation effects in γ-ray irradiated power VDMOSFET by DCIV technique," IEEE Trans. Nucl. Sci., vol. 48, pp. 2285-2293, Jan. 2001.
8. C. T. Neugroschel et al., "Direct-Current measurements of oxide and interface traps on oxidized silicon," IEEE Trans. Electron Devices, vol. 42, pp. 1657-1662, Oct. 1995.
9. P. J. McWhorter and P. S. Winokur, "Simple technique for separating the effects of interface traps and oxide charge in metal-oxide-semiconductor transistors," Appl. Phys. Lett., vol. 48, pp. 133-135, 1986.
10. o-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides," IEEE Trans. Nucl. Sci., vol. 47, pp. 2175-2182, December 2000.
11. H. E. Groseneken et al., "A reliable approach to charge-pumping measurement in MOS transistors," IEEE Trans. Electron Devices, vol. 31, pp. 42-53, Jan. 1984.
12. G. Blasquez, G. Barbottin, and V. Boisson, "Instabilities in bipolar devices," in Instabilities in Silicon Devices, G. Barbottin and A. Vapaille, Eds. Amsterdam, The Netherlands: North-Holland, 1989, vol. 2, pp. 407-535.
13. MINIMOS6.1 User's Guide, Institute for Microelectronics, Technical University of Vienna, Austria, 1999.
14. H. Johnston, "Super recovery of total dose damage in MOS devices," IEEE Trans. Nucl. Sci., vol. ED-31, pp. 1427-1433, Oct. 1984.
15. J. R. Schwank et al., "Physical mechanism contributing to device 'rebound'," IEEE Trans. Nucl. Sci., vol. NS-31, pp. 1434-1438, Oct. 1984.
16. 2 by X-ray and Co-60 radiations," IEEE Trans. Nucl. Sci., vol. NS-32, pp. 4363-4368, Dec. 1985.
17. 2/Si structure," Appl. Phys. Lett., vol. 51, pp. 270-272, 1987.
18. J. Lelis et al., "Reversibility of trapped hole annealing," IEEE Trans. Nucl. Sci., vol. 35, pp. 1186-1191, Oct. 1988.
19. 2 interface defect formation after ionising radition," IEEE Trans. Nucl. Sci., vol. 35, pp. 1227-1233, Aug. 1988.
20. P. J. McWhorter et al., "Comparison of MOS capacitor and transistor postirradiation response," IEEE Trans. Nucl. Sci., vol. 36, pp. 1792-1799, Dec. 1989.
21. R. E. Stahlbush and B. J. Mrstik, "Post-irradiation behavior of the interface state density and the trapped positive charge," IEEE Trans. Nucl. Sci., vol. 37, pp. 1641-1649, Dec. 1990.
22. J. R. Schwank et al., "Latent interface trap buildup and its implications hardness assurance," IEEE Trans. Nucl. Sci., vol. 39, pp. 1953-1963, Dec. 1992.