Two novel modeling methodologies for IGBT transistor

IECON Proceedings (Industrial Electronics Conference)

Volumn 1, Issue , 2002, Pages 550-554

  Charfi, F ^a   Messaoud, M Ben ^a   Francois, B ^b   Al Haddad, K ^c   Sellami, F ^a  

^a UNIVERSITY OF SFAX   (Tunisia)

^b ECOLE CENTRALE DE LILLE   (France)

^c ÉCOLE DE TECHNOLOGIE SUPÉRIEURE   (Canada)

Author keywords

Degrade mode; Discrete event simulation; IGBT; Modeling; Simulation

Indexed keywords

DISCRETE EVENT SIMULATION; POWER ELECTRONICS CIRCUIT; SOFTWARE PACKAGE MATLAB SIMULINK;

COMPUTATIONAL METHODS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC WAVEFORMS; FORMAL LOGIC; MATHEMATICAL MODELS; POWER ELECTRONICS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036954951     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2002.1187567     Document Type: Conference Paper

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