Properties of reactively sputtered ZnTe:N and its use in recombination junctions

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 539-542

  Drayton, J ^a   Taylor, C ^a   Gupta, A ^a   Bohn, R G ^a   Rich, G ^a,c   Compaan, A D ^a   McCandless, B E ^b   Rose, D ^c  

^a UNIVERSITY OF TOLEDO   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c FIRST SOLAR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; EMISSION SPECTROSCOPY; HALL EFFECT; LIGHT ABSORPTION; OPTIMIZATION; RAMAN SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SPUTTERING; TUNNEL JUNCTIONS; X RAY DIFFRACTION ANALYSIS;

RECOMBINATION JUNCTION; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY; ZINC TELLURIDE;

SOLAR CELLS;

EID: 0036953448     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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