Thermionic emission model for interface effects on the open-circuit voltage of amorphous silicon based solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 1086-1089

  Schiff, E A ^a  

^a SYRACUSE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRONS; SEMICONDUCTING SILICON; THERMIONIC EMISSION;

BANDGAP; ELECTROSTATIC BARRIER; INTERFACE EFFECT; OPEN CIRCUIT VOLTAGE;

SILICON SOLAR CELLS;

EID: 0036953397     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

1. R. S. Crandall and E. A. Schiff, in 13th NREL Photovoltaics Program Review, edited by H. S. Ullal and C. Edwin Witt (AIP Conf. Proc. Vol. 353, Woodbury, 1995), p. 101.
2. J. Yang, X. Xu, and S. Guha, in Amorphous Silicon Technology-1994, edited by E. A. Schiff, et al. (Materials Research Society Symposium Proceedings Vol. 336, 1994), p. 687.
3. Q. Wang, H. Antoniadis, E. A. Schiff, and S. Guha, Phys. Rev. B 47, 9435 (1993).
4. S. Guha, J. Yang, A. Banarjee, T. Glatfelter, K. Hoffman, X. Xu, Technical Digest - 7th International Photovoltaic Science and Engineering Conference, Nagoya, Japan (PVSEC-7), p. 43 (1993).
5. X. Xu, J. Yang, and S. Guha, Appl. Phys. Lett. 62 1399 (1993).
6. S. Guha, J. S. Jayson, S. C. Agarwal, S. R. Ovshinsky, J. Non-Cryst. Solids 97&98, 1455 (1987).
7. Q. Gu, Q. Wang, E. A. Schiff, Y.-M. Li and C. T. Malone, J. Appl. Phys. 76, 2310 (1994).
8. S. Guha, J. Yang, P. Nath, M. Hack, Appl. Phys. Lett. 49, 218 (1986).
9. R. R. Arya, A. Catalano, and R. S. Oswald, Appl. Phys. Lett. 49, 1089 (1986).
10. H. Sakai, T. Yoshida, S. Fujikake, T. Hama, and Y. Ichikawa, J. Appl. Phys. 67, 3494 (1990).
11. J. M. Pearce, R. J. Koval, A. S. Ferlauto, R. W. Collins, C. R. Wronski, J. Yang and S. Guha, Appl. Phys. Lett. 77, 19 (2000).
12. OC for for cells with poor and optimal p-layers declines at lower intensities.
13. AMPS PC is a copyright of Pennsylvania State University, and was developed by Stephen Fonash's research group there.
14. L. Jiang, S. Rane, E. A. Schiff, Q. Wang, Q. Yuan in Amorphous and Heterogeneous Films - 2000, edited by H. M. Branz, et al. (Materials Research Society, Symp. Proc. Vol. 609, Pittsburgh, 2001), A18.3.1.
15. C.
16. Fh across the p/i interface. Unlike the thermionic emisson case, no analytical approximation to this relation has been proposed. Such an approximation would be quite enlightening.
17. This assumption that only the conduction bandedge is involved in alloying with Ge is suggested by bandtail widths. The conduction bandtail width broadens markedly with alloying, while the valence bandtail width does not. The issue certainly needs further study.
18. Y. Liu and V. L. Dalal, in Amorphous and Heterogeneous Silicon-Based Films-2002, edited by J. R. Abelson, et al. (Materials Research Society Symposium Proceedings Vol. 715, Pittsburgh, 2002), in press.