Study of silver-palladium thick film conductor for metallisation of aluminium nitride substrate

British Ceramic Transactions

Volumn 101, Issue 4, 2002, Pages 169-171

  Tian, M B ^a   Zheng, D F ^a   Wang, Y Q ^a   He, W ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CONDUCTIVE MATERIALS; GLASS; METALLIZING; MICROSTRUCTURE; PALLADIUM; POROSITY; POWDERS; SILVER; SINTERING; SUBSTRATES; THICK FILMS;

BONDING MECHANISM; GLASS FRIT MELTS; POROUS STRUCTURE; SILVER PALLADIUM THICK FILM CONDUCTOR;

ALUMINUM NITRIDE;

EID: 0036950721     PISSN: 09679782     EISSN: None     Source Type: Journal    
DOI: 10.1179/096797802225003424     Document Type: Article

References (8)

1. K. J. Lodge, J. A. Sparrow, E. D. Perry, E. A. Logan, M. T. Goosey, D. J. Pedder, and C. Montgomery: IEEE Trans. Comp., Hybrids, Manuf. Technol., 1990, 13, 633-638.
2. B. C. Foster, F. J. Bancher, E. S. Tormey, M. A. Occhionero, and P. A. White: IEEE Trans. Comp., Hybrids. Manuf. Technol., 1991, 14, 784-789.
3. Y. Kurihrar, S. Takahashi, and K. Yamada: IEEE Trans. Comp., Hybrids, Manuf. Technol., 1990, 13, 306-312.
4. H. Asai, K. Yano, M. Endo, and T. Takahashi: Proc. Fulruth Memorial Int. Symp. on Advanced Ceramics. August 1993, 117-124.
5. H. Asai, K. Iyogi, K. Yano, and N. Iwase: Proc. 1997 IEMT/IMC Symp., April 1997, Omiya Sonic City, Japan, 391-395.
6. A. Ohki, M. Usui, N. Sato, N. Matsuura, K. Katsura, and Y. Ando: Proc. 1998 IEMT/IMC Symp., April 1998, Tokyo, Japan, 123-126.
7. N. Iwase, K. Asai, K. Yano, J. Monma, T. Yasumoto, and T. Fujiwara: Proc. IEEE/CPMT 1996 Int. Electronics Manufacturing Technology Symp., 99-103; 1996, Piscataway, NJ, IEEE.
8. M. Bratcher, R. J. Yoon, and B. Whitworth: Proc. 3rd Int. High Temperature Electronics Conf., June 1996, Albuquerque, NM, USA.