Forming through channels in silicon substrates

Technical Physics Letters

Volumn 28, Issue 12, 2002, Pages 1058-1059

  Buchin, E Yu ^a   Denisenko, Yu I ^a   Rudakov, V I ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036948834     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1535502     Document Type: Article

References (4)

1. V. I. Rudakov and L. A. Koledov, in Foreign Electron Engineering: Scientific and Technical Collection (TsNII "Elektronika", Moscow, 1993), pp. 27-60.
2. B. Schwartz and H. Robbins, J. Electrochem. Soc. 123 (12), 1903 (1976).
3. X. G. Zhang, S. D. Collins, and R. L. Smith, J. Electrochem. Soc. 136 (5), 1561 (1989).
4. B. V. Mochalov and V. I. Rudakov, Prib. Tekh. Éksp., No. 2, 155 (1996).