Non-uniform conduction induced reverse channel length dependence of ESD reliability for silicided NMOS transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 341-344

  Oh, Kwang Hoon ^a   Banerjee, Kaustav ^b   Duvvury, Charvaka ^c   Dutton, Robert W ^a  

^a Stanford University   (United States)

^b University of California   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTROSTATICS; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL DIFFUSION IN SOLIDS;

BIPOLAR CONDUCTION;

MOSFET DEVICES;

EID: 0036930456     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. A. Amerasekera et al., IRPS, pp. 318-326, 1996.
2. A. Amerasekera et al., IRPS, pp. 159-166, 1999.
3. K.Bock et al.,EOS/ESD symp., pp.95-104, 1999.
4. S. M. Sze, Physics of semiconductor Devices, 1981.
5. K-H. Oh et al., IRPS, pp. 226-234, 2001.
6. K. Banerjee et al., IRPS, pp. 284-292, 1998.
7. A. Amerasekera et al., IEEE Trans. Electron Dev., 1991.