Active pixel image sensor scale down in 0.18 um CMOS technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 813-816

  Chien, Ho Ching ^a   Wuu, Shou Gwo ^a   Yaung, Dun Nian ^a   Tseng, Chien Hsien ^a   Lin, Jeng Shyan ^a   Wang, Chung S ^a   Chang, Chin Kung ^a   Hsiao, Yu Kung ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CROSSTALK; IMAGE SENSORS; PHOTODIODES; QUANTUM EFFICIENCY;

COLOR RENDITION;

CMOS INTEGRATED CIRCUITS;

EID: 0036923507     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. V. Bereezin " Small CMOS Pixel Design with Single Row Line " 2001 IEEE Workshop on CCD and Advance Image Sensor, pp. 64-67
2. S.G.Wuu et al " A High Performance Active Pixel with 0.18um Color Image Technology " IEDM Tech. Dig 2001, pp. 555-558
3. D.N. Yaung et al " Effect of Hydrogen Annealing on 0.25um CMOS Image Sensor " 2001 IEEE Workshop on CCD and Advance Image Sensor, pp. 122-124
4. S.G.Wuu et al " High Performance 0.25um CMOS Color Image Technology with Non-silicide Source/Drain Pixel " IEDM Tech.Dig, 2000, pp. 705-708