A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 65-68

  Wu, C C ^a,b   Leung, Y K ^a,b   Chang, C S ^a,b   Tsai, M H ^a,b   Huang, H T ^a,b   Lin, D W ^a,b   Sheu, Y M ^a,b   Hsieh, C H ^a,b   Liang, W J ^a,b   Han, L K ^a,b   Chen, W M ^a,b   Chang, S Z ^a,b   Wu, S Y ^a,b   Lin, S S ^a,b   Lin, H C ^a,b   Wang, C H ^a,b   Wang, P W ^a,b   Lee, T L ^a,b   Fu, C Y ^a,b   Chang, C W ^a,b   Chen, S C ^a,b   Jang, S M ^a,b   Shue, S L ^a,b   Lin, H T ^a,b   See, Y C ^a,b   Mii, Y J ^a,b   Diaz, C H ^a,b   Lin, Burn J ^a,b   Liang, M S ^a,b   Sun, Y C ^a,b   more..

^a SBIP   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; INTERCONNECTION NETWORKS; INTERFACES (COMPUTER); STANDBY POWER SYSTEMS; TRANSISTORS;

LOW-LEAKAGE TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 0036923246     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2002.1175780     Document Type: Article

References (8)

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8. A. Keshavarzi, VLSI circuit, p. 312, 2002.