Patterns formed on the dimer vacancy array of Si(100) by self-assembly

Nanotechnology

Volumn 13, Issue 6, 2002, Pages 729-732

  Liu, H W ^a   Yang, H Q ^a   Guo, H M ^a   Wang, Y L ^a   Lin, X ^a   Pang, S J ^a   Gao, H J ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DIMERS; ETCHING; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY;

DIMER VACANCY ARRAYS (DVA);

SEMICONDUCTING SILICON;

EID: 0036918884     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/13/6/306     Document Type: Conference Paper

References (8)

1. Zandvliet H.J.W., Elswijk H.B., van Loenen E.J. and Tsong I.S.T. 1992 Phys. Rev. B 46 7581.
2. Fei H., Zandvliet H.J.W., Tsai M.H., Dow J.D. and Tsong I.S.T. 1992 Phys. Rev. Lett. 69 3076.
3. Chander M., Goetsch D.A., Aldao C.M. and Weaver J.H. 1995 Phys. Rev. B 52 8288.
4. Chander M., Li Y.Z., Rioux D. and Weaver J.H. 1993 Phys. Rev. Lett. 71 4154.
5. Niehus H., Kohler U.K., Copel M. and Demuth J.E. 1988 J. Microsc. 152 735.
6. Yang H.Q., Zhu C.X., Gao H.J., Xue Z.Q. and Pang S.J. 1998 Surf. Sci. 412/413 236.
7. Zhao Y.F., Yang H.Q. and Pang S.J. 2000 Phys. Rev. B 62 R7715.
8. Mo Y.W., Kleiner J., Webb M.B. and Lagally M.G. 1991 Phys. Rev. Lett. 66 1998.