HgCdTe focal plane arrays formed by heterojunction epitaxy and boron implantation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4721, Issue , 2002, Pages 234-241

  Chu, Muren ^a   Mesropian, Shoghig ^a   Gurgenian, H K ^a   Terterian, Sevag ^a   Wang, C C ^a  

^a Fermionics Corporation   (United States)

Author keywords

Focal plane array; Heterojunction; HgCdTe; Infrared; Ion implantation; Longwave; Midwave; Shortwave

Indexed keywords

BORON; EPITAXIAL GROWTH; HETEROJUNCTIONS; ION IMPLANTATION; PHOTODIODES; SEMICONDUCTING CADMIUM TELLURIDE;

BORON IMPLANTATION; FOCAL PLANE ARRAY; MERCURY CADMIUM TELLURIDE;

INFRARED DETECTORS;

EID: 0036916250     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.478851     Document Type: Conference Paper

References (6)

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5. M. Chu, S. Terterian, S. Mesropian, R.H. Gurgenian, C.C. Wang, and D.S. Pan, "Advanced Au-doped HgCdTe for LWIR Detectors and Focal Plane Arrays," SPIE Proceedings, 4454, San Diego, 2001.
6. S. Terterian, M. Chu, S. Mesropian, H.K. Gurgenian, and C.C. Wang, "A Comparative Study, and Performance Characteristics of Ion-implanted and Heterojunction SWIR HgCdTe FPA's" The 2001 U.S. Workshop on the Physics and Chemistry of II-VI Materials, to be published in Journal of electronic materials, Orlando, 2001.