Characterization of the dark current of a Quantum Well Infrared Photodetector (QWIP) with selectively doped barrier layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4721, Issue , 2002, Pages 151-158

  Uchiyama, Yasuhito ^a   Nishino, Hironori ^a   Matsukura, Yusuke ^a   Miyatake, Tetsuya ^a   Yamamoto, Kosaku ^a   Fujii, Toshio ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Activation energy; Dark current; QWIP; Selective doping

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; PHOTOCURRENTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

DARK CURRENT; QUANTUM WELL INFRARED PHOTODETECTOR; SELECTIVE DOPING; THERMAL ASSISTED TUNNELING;

INFRARED DETECTORS;

EID: 0036916248     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.478844     Document Type: Conference Paper

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