Multilevel magnetoresistive random access memory written at curie point

Digests of the Intermag Conference

Volumn , Issue , 2002, Pages

  Zheng, Yuankai K ^a   Wu, Y H ^a,b   Qiu, Jinjun ^a   Guo, Z B ^a   Han, G C ^a   Li, K B ^a   Lu, Z Q ^a   Xie, H ^a   Luo, P ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; MAGNETIC RECORDING; MAGNETIZATION; MAGNETORESISTANCE; SIGNAL TO NOISE RATIO;

SPIN-VALVES;

RANDOM ACCESS STORAGE;

EID: 0036908044     PISSN: 00746843     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Won-Cheol Jeong, Byung-ii Lee, and Seung-Ki Joo, "Three level, six state multilevel magnetoresistive RAM(MRAM)", J. Appl. Phys. 85(8), 4782-4784(1999).
2. R.S. Beech, J.A. Anderson, A.V. Pohm, and J.M. Daughton, "Curie point written magnetoresistive memory", J. Appl. Phys. 87(9), 6403-6405(2000).