A comparison of resonant tunneling based on Schrödinger's equation and quantum hydrodynamics

VLSI Design

Volumn 15, Issue 4, 2002, Pages 695-700

  Abdallah, Naoufel Ben ^a   Pinaud, Olivier ^a   Gardner, Carl L ^b   Ringhofer, Christian ^b  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Quantum hydrodynamic model; Resonant tunneling diode; Schr dinger equation

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIFFERENTIAL EQUATIONS; HYDRODYNAMICS; INTEGRATED CIRCUIT LAYOUT; POISSON EQUATION; RESONANT TUNNELING; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES;

QUANTUM HYDRODYNAMIC MODEL; QUANTUM SEMICONDUCTOR DEVICES; RESONANT TUNNELING DIODE; SCHRODINGER EQUATION;

VLSI CIRCUITS;

EID: 0036901262     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1080/106551402100012309     Document Type: Article

References (13)

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