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Volumn 65, Issue 1-2, 2002, Pages 25-46

Determination of SF6 reactive ion etching end point of the SiO2/Si system by plasma impedance monitoring

Author keywords

End point detection; In situ plasma monitoring; PIM; Plasma diagnostics; Plasma Impedance; Reactive ion etching

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARMONIC ANALYSIS; PLASMA APPLICATIONS; POLYNOMIALS; SILICA;

EID: 0036892574     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00727-X     Document Type: Article
Times cited : (18)

References (20)
  • 12
    • 0011743124 scopus 로고    scopus 로고
    • Internet, Dublin, Ireland
    • Internet: http://www.scisys.com (Dublin, Ireland: Scientific Systems Ltd., 2000).
    • (2000)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.