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Volumn 65, Issue 1-2, 2002, Pages 25-46
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Determination of SF6 reactive ion etching end point of the SiO2/Si system by plasma impedance monitoring
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Author keywords
End point detection; In situ plasma monitoring; PIM; Plasma diagnostics; Plasma Impedance; Reactive ion etching
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Indexed keywords
ELECTRIC CURRENTS;
ELECTRIC IMPEDANCE;
ELECTRIC POTENTIAL;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
HARMONIC ANALYSIS;
PLASMA APPLICATIONS;
POLYNOMIALS;
SILICA;
END POINT DETECTION;
REACTIVE ION ETCHING;
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EID: 0036892574
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/S0167-9317(02)00727-X Document Type: Article |
Times cited : (18)
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References (20)
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