Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2155-2160

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Botchkarev, Andrei E ^b   Nelson, Nicole N ^b   Fahmi, M M E ^b   Griffin, James A ^b   Khan, Arif ^b   Noor Mohammad, S ^b   Johnstone, D K ^c   Bublik, V T ^d   Chsherbatchev, K D ^d   Voronova, M I ^d   Kasatochkin, V S ^a  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Howard University   (United States)

^c AIR FORCE OFFICE OF SCIENTIFIC RESEARCH   (United States)

^d NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SOLID SOLUTIONS;

RECOMBINATION CENTERS;

SEMICONDUCTING FILMS;

EID: 0036890435     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00179-X     Document Type: Article

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