Technique for preparation of precise wafer cross sections and applications to electron beam lithography of poly(methylmethacrylate) resist

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 3085-3088

  Hu, Wenchuang ^a   Orlova, Tatyana ^a   Bernstein, Gary H ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; MOLECULAR WEIGHT; PHOTORESISTS; PLASMA ETCHING; POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

CROSS-SECTIONAL SCANNING ELECTRON MICROSCOPY; HIGH ASPECT RATIO ETCHING; POLYMETHYLMETHACRYLATE RESIST;

ELECTRON BEAM LITHOGRAPHY;

EID: 0036883221     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1518020     Document Type: Article

References (16)

1. K. Banerjee, D. Y. Kim, A. Amerasekera, C. Hu, S. S. Wong, and K. E. Goodson, 38th IEEE Annual International Reliability Physics Symposium Proceedings, 2000, p. 283.
2. J. H. Son, M. Y. Park, and S. W. Rhee, Thin Solid Films 335, 229 (1998).
3. Y. Chen, D. Macintyre, and S. Thoms, J. Vac. Sci. Technol. B 17, 2507 (1999).
4. L. Guo, E. Leobandung, L. Zhuang, and S. Y. Chou, J. Vac. Sci. Technol. B 15, 2840 (1997).
5. W. Chen and H. Ahmed, J. Vac. Sci. Technol. B 15, 1402 (1997).
6. T. D. Happ, A. Markard, M. Kamp, A. Forchel, S. Anand, J.-L. Gentner, and N. Bouadma, J. Vac. Sci. Technol. B 19, 2775 (2001).
7. J. Chen and D. G. Ivey, Micron 33, 489 (2002).
8. H. Li and L. Salamanca-Riba, Ultramicroscopy 88, 171 (2001).
9. E. C. G. Kirk, D. A. Williams, and H. Ahmed, Inst. Phys. Conf. Ser. 100, 501 (1989).
10. T. Ishitani and T. Yaguchi, Microsc. Res. Tech. 35, 320 (1996).
11. L. A. Giannuzzi and F. A. Stevie, Micron 30, 197 (1999).
12. Ni. Kato, K. Tsujimoto, and N. Miura, Electron Microscopy of Semiconducting Materials and VLSI Devices, Symposium, 1998, p. 15.
13. G. H. Bernstein, D. A. Hill, and W. P. Liu, J. Appl. Phys. 71, 4066 (1992).
14. W. Chen and H. Ahmed, J. Vac. Sci. Technol. B 11, 2519 (1993).
15. Q. Hang, Y. Wang, M. Lieberman, and G. H. Bernstein, Appl. Phys. Lett. 80, 4220 (2002).
16. K. Murata, E. Nomura, K. Nagami, T. Kato, and H. Nakata, J. Vac. Sci. Technol. 16, 1734 (1979).