Improved surface treatments for recycled (100) GaAs substrates in view of molecular-beam epitaxy growth: Auger electron spectroscopy, Raman, and secondary ion mass spectrometry analyses

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2214-2218

  Négri, Fabienne ^a   Bedel Pereira, Eléna ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL CLEANING; COMPOSITION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; POLISHING; SECONDARY ION MASS SPECTROMETRY; SOLUTIONS; SUBSTRATES; SURFACE PHENOMENA;

CRYSTALLINE DISORDER; RECYCLING PROCESS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036883076     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1515908     Document Type: Article

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