Focused-ion-beam fabricated charge density wave devices

Journal De Physique. IV : JP

Volumn 12, Issue 9, 2002, Pages

  Slot, E ^a   Van der Zant, H S J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; DEPOSITION; ELECTRIC PROPERTIES; ENERGY GAP; ETCHING; HETEROJUNCTIONS; ION BEAMS; NIOBIUM COMPOUNDS; TRANSPORT PROPERTIES;

CHARGE DENSITY WAVE DEVICES; FINITE SIZE EFFECTS; FOCUSED ION BEAM; MODE LOCKING;

ELECTRON DEVICE MANUFACTURE;

EID: 0036874702     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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