Point of use regeneration of oxide chemical mechanical planarization slurry by filtrations

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11, 2002, Pages 6342-6346

  Kim, Myoung Shik ^a   Woo, Sun Woong ^b   Park, Jin Goo ^a  

^a Hanyang University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

CMP; Conductivity; Defect density; Microscratch; Oxide slurry; PH; Regenerated slurry; RO filtration; Specific gravity; TEOS removal rate; UF filtration

Indexed keywords

CRYSTAL DEFECTS; DENSITY (SPECIFIC GRAVITY); ELECTRIC CONDUCTIVITY; PARTICLE SIZE ANALYSIS; PH EFFECTS; SILICON WAFERS; SLURRIES; ULTRAFILTRATION;

MICROSCRATCHES;

CHEMICAL MECHANICAL POLISHING;

EID: 0036873204     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.6342     Document Type: Article

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