Characteristics of HgCdTe epilayer grown by LPE using horizontal slider

Bulletin of Materials Science

Volumn 25, Issue 6, 2002, Pages 483-486

  Radhakrishnan, J K ^a   Sitharaman, S ^a   Gupta, S C ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

Characterization; HgCdTe; LPE

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LIQUID PHASE EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE; X RAY SPECTROSCOPY;

MERCURY CADMIUM TELLURIDE; MODIFIED HORIZONTAL SLIDER SYSTEM;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0036870032     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02710533     Document Type: Article

References (2)

1. Capper P (ed.) 1997 Narrow gap II-VI compounds for optoelectronic and electromagnetic applications (UK: Chapman & Hall) p. 357
2. Radhakrishnan J K, Durai L, Bhatnagar M K, Sitharaman S and Gupta S C 2001 Physics of semiconductor devices (eds) Vikram Kumar and P K Basu (New Delhi: Allied Publishers Ltd) p. 1182