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Volumn 49, Issue 11, 2002, Pages 2031-2035

Anomalous phosphorous diffusion

Author keywords

Diffusion; High concentration; Ion implantation; Phosphorous

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ION IMPLANTATION; PHOSPHORUS;

EID: 0036867815     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.804708     Document Type: Article
Times cited : (6)

References (4)
  • 1
    • 0012119412 scopus 로고    scopus 로고
    • Time evolution of arsenic, phosphorous, and boron-doped crystalline silicon resistance
    • to be published
    • K. Suzuki, T. Hiroko, and T. Aoyama, "Time evolution of arsenic, phosphorous, and boron-doped crystalline silicon resistance," J. Electrochem. Soc., to be published.
    • J. Electrochem. Soc.
    • Suzuki, K.1    Hiroko, T.2    Aoyama, T.3
  • 2
    • 33746383223 scopus 로고
    • Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
    • N.E.B. Cowern, K.T.F. Janssen, and H.F.F. Jos, "Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles," J. Appl. Phys., vol. 68, pp. 6191-6198, 1990.
    • (1990) J. Appl. Phys. , vol.68 , pp. 6191-6198
    • Cowern, N.E.B.1    Janssen, K.T.F.2    Jos, H.F.F.3
  • 3
    • 0346658116 scopus 로고
    • Electrical properties of silicon containing arsenic and boron
    • F.J. Morrin and J.P. Maita, "Electrical properties of silicon containing arsenic and boron," Phys. Rev., vol. 96, pp. 28-35, 1954.
    • (1954) Phys. Rev. , vol.96 , pp. 28-35
    • Morrin, F.J.1    Maita, J.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.