Damascene W/TiN gate MOSFETs with improved performance for 0.1-μm regime

IEEE Transactions on Electron Devices

Volumn 49, Issue 11, 2002, Pages 1891-1896

  Li, Ruizhao ^a   Xu, Qiuxia ^b  

^a Via Technologies ^*  (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Midgap gate material and threshold voltage; Non CMP technology; Refractory metal stacked gate; Sub 0.1 m technology; Surface state density

Indexed keywords

ION IMPLANTATION; MOS DEVICES; THRESHOLD VOLTAGE; TITANIUM NITRIDE; TUNGSTEN;

GATE ELECTRODES;

MOSFET DEVICES;

EID: 0036867745     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.804707     Document Type: Article

References (13)

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