Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs+

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 6, 2002, Pages 2049-2051

  Musket, R G ^a,b   Balooch, M ^a,c  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b Musket Consulting   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION IMPLANTATION; POSITIVE IONS; THERMODYNAMIC STABILITY; VACUUM APPLICATIONS;

FUNCTION SURFACES;

SILICON;

EID: 0036863391     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1517259     Document Type: Article

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